4.0-11.0 ghz gaas mmic buffer amplifier excellent transmit lo/output buffer stage compact size 23.0 db small signal gain +20.0 dbm p1db compression point 4.5 db noise figure variable gain with adjustable bias 100% on-wafer rf, dc and output power testing 100% commercial-level visual inspection using mil-std-883 method 2010 features chip device layout absolute maximum ratings supply voltage (vd) supply current (id1) gate bias voltage (vg) input power (pin) storage temperature (tstg) operating temperature (ta) channel temperature (tch) +4.3 vdc 180 ma 0v +20.0 dbm -65 to +165 o c -55 to +85 o c 175 o c page 1 of 9 channel temperature affects a device's mttf. it is recommended to keep channel temperature as low as possible for maximum life. electrical characteristics (ambient temperature t = 25 o c) parameter frequency range (f ) input return loss (s11) output return loss (s22) small signal gain (s21) gain flatness ( s21) reverse isolation (s12) noise figure output power for 1db compression (p1db) saturated output power (psat) drain bias voltage (vd2) gate bias voltage (vg2) supply current (id) (vd=4.0v, vg2=-0.5v typical) units ghz db db db db db db dbm dbm vdc vdc ma min. 4.0 - - - - - - - - - -1.0 - typ. - 20.0 12.0 23.0 +/-1.5 65.0 4.5 +20.0 +21.0 +4.0 -0.35 100 max. 11.0 - - - - - - - - +4.0 -0.1 130 (2) measured using constant current. 2 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. b1007-bd mimix broadband?s two stage 4.0-11.0 ghz gaas mmic buffer amplifier has a small signal gain of 23.0 db with a +20.0 dbm p1db output compression point. the device also provides variable gain regulation with adjustable bias. this mmic uses mimix broadband?s gaas phemt device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. the chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. this device is well suited for microwave and millimeter-wave point-to-point radio, lmds, satcom and vsat applications. general description october 2009 - rev 10-oct-09
buffer amplifier measurements page 2 of 9 4.0-11.0 ghz gaas mmic buffer amplifier b1007-bd xb1007-bd vd=4.0 v, id=130 ma, vg2=open 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 frequency (ghz) gain (db) +95 deg c -30 deg c +25 deg c xb1007-bd vd=4.0 v, id=130 ma, vg2=open -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 frequency (ghz) reverse isolation (db) +95 deg c -30 deg c +25 deg c xb1007-bd vd=4.0 v, id=130 ma, vg2=open -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 frequency (ghz) input return loss (db) +95 dec c -30 deg c +25 deg c *includes f ixture losses xb1007-bd vd=4.0 v, id=130 ma, vg2=open -30 -25 -20 -15 -10 -5 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 frequency (ghz) output return loss (db) +95 deg c -30 deg c +25 deg c *includes fixture losses mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. october 2009 - rev 10-oct-09
buffer amplifier measurements (cont.) page 3 of 9 4.0-11.0 ghz gaas mmic buffer amplifier b1007-bd xb1007-bd vd=4.5 v, id=130 ma, vg2=open 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 frequency (ghz) gain (db) +95 deg c -30 deg c +25 deg c xb1007-bd vd=4.5 v, id=130 ma, vg2=open -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 frequency (ghz) reverse isolation (db) +95 deg c -30 deg c +25 deg c xb1007-bd vd=4.5 v, id=130 ma, vg2=open -45 -40 -35 -30 -25 -20 -15 -10 -5 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 frequency (ghz) input return loss (db) +95 dec c -30 deg c +25 deg c *includes f ixture losses xb1007-bd vd=4.5 v, id=130 ma, vg2=open -30 -25 -20 -15 -10 -5 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 frequency (ghz) output return loss (db) +95 deg c -30 deg c +25 deg c *includes fixture losses xb1007-bd vd=4.5 v, id=130 ma, vg2=open pin=+5 dbm 19.0 19.5 20.0 20.5 21.0 21.5 22.0 22.5 23.0 23.5 24.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 frequency (ghz) saturated output power (dbm) +95 deg c -30 deg c +25 deg c mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. october 2009 - rev 10-oct-09
buffer amplifier measurements (cont.) page 4 of 9 4.0-11.0 ghz gaas mmic buffer amplifier b1007-bd xb1007-bd vd=5.0 v, id=130 ma, vg2=open 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 frequency (ghz) gain (db) +95 deg c -30 deg c +25 deg c xb1007-bd vd=5.0 v, id=130 ma, vg2=open -110 -100 -90 -80 -70 -60 -50 -40 -30 -20 -10 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 frequency (ghz) reverse isolation (db) +95 deg c -30 deg c +25 deg c xb1007-bd vd=5.0 v, id=130 ma, vg2=open -50 -45 -40 -35 -30 -25 -20 -15 -10 -5 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 frequency (ghz) input return loss (db) +95 dec c -30 deg c +25 deg c *includes f ixture losses xb1007-bd vd=5.0 v, id=130 ma, vg2=open -30 -25 -20 -15 -10 -5 0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 frequency (ghz) output return loss (db) +95 deg c -30 deg c +25 deg c *includes fixture losses xb1007-bd vd=5.0 v, id=130 ma, vg2=open pin=+5 dbm 19.0 19.5 20.0 20.5 21.0 21.5 22.0 22.5 23.0 23.5 24.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 frequency (ghz) saturated output power (dbm) +95 deg c -30 deg c +25 deg c mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. october 2009 - rev 10-oct-09
buffer amplifier measurements (cont.) page 5 of 9 4.0-11.0 ghz gaas mmic buffer amplifier b1007-bd xb1007-bd vd=5.0 v, id=130 ma, vg2=open 20 25 30 35 40 45 50 55 60 65 012345678910111213141516 output power scl (dbm) output third order intermods (dbc) 5.0 ghz 6.0 ghz 7.0 ghz 8.0 ghz 9.0 ghz 10.0 ghz xb1007-bd vd=5.0 v, id=130 ma, vg2=open 22 23 24 25 26 27 28 29 30 31 32 33 34 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 output power scl (dbm) output third order intercept (dbm) 5.0 ghz 6.0 ghz 7.0 ghz 8.0 ghz 9.0 ghz 10.0 ghz xb1007-bd vd=see legend, id=130 ma, vg2=open 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 frequency (ghz) gain (db) vd=4.0v vd=4.5v vd=5.0 v xb1007-bd vd=see legend, id=130 ma, vg1=open 0 1 2 3 4 5 6 7 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 frequency (ghz) noise figure (db) vd=4.0 v vd=4.5 v vd=5.0 v mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. october 2009 - rev 10-oct-09
s-parameters page 6 of 9 4.0-11.0 ghz gaas mmic buffer amplifier b1007-bd typcial s-parameter data for xb1007-bd vd=4.5 v, id=130 ma frequency s11 s11 s21 s21 s12 s12 s22 s22 (ghz) (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 0.045 0.978 -4.96 0.025 -167.48 0.0012 2.71 1.000 -3.23 1.0 0.558 -47.76 2.108 96.03 0.0001 -117.16 0.881 -75.42 2.0 0.292 -50.93 5.334 55.58 0.0009 141.34 0.646 -133.66 3.0 0.211 -59.68 8.848 17.23 0.0016 81.43 0.502 176.53 4.0 0.189 -81.69 12.975 -20.85 0.0013 32.52 0.392 126.19 5.0 0.148 -92.58 16.002 -61.20 0.0010 14.48 0.299 71.12 6.0 0.049 -131.19 17.813 -103.17 0.0006 -143.50 0.235 2.95 7.0 0.031 103.39 16.657 -140.92 0.0010 90.00 0.183 -58.81 8.0 0.052 40.99 16.006 -173.62 0.0018 76.58 0.177 -98.54 9.0 0.089 14.70 14.867 154.53 0.0027 60.07 0.160 -133.12 10.0 0.044 20.61 14.065 123.27 0.0021 -3.97 0.127 -159.96 11.0 0.014 91.02 12.785 91.14 0.0014 -34.03 0.049 -166.81 12.0 0.058 124.81 11.218 59.48 0.0018 -103.20 0.074 -66.32 13.0 0.141 114.80 9.492 28.22 0.0021 -159.33 0.216 -78.40 14.0 0.223 104.74 7.781 -2.27 0.0037 160.77 0.370 -101.39 15.0 0.279 92.29 6.067 -31.02 0.0041 132.87 0.501 -122.23 16.0 0.329 77.30 4.663 -57.12 0.0038 133.16 0.610 -142.71 17.0 0.361 67.40 3.548 -80.79 0.0030 141.13 0.693 -159.49 18.0 0.376 60.85 2.701 -103.10 0.0058 134.50 0.760 -175.38 19.0 0.373 52.87 2.084 -123.45 0.0082 102.56 0.794 170.52 20.0 0.361 48.90 1.623 -142.31 0.0105 61.49 0.804 159.64 mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. october 2009 - rev 10-oct-09
rf in rf out 1 2 3 4 vg1 vd vg2 5 1.100 (0.043) 1 2 3 4 0.241 (0.009) 0.841 (0.033) 1.100 (0.043) 0.0 0.0 0.790 (0.031) 0.790 (0.031) 0.105 (0.004) 5 page 7 of 9 mechanical drawing bias arrangement bypass capacitors - see app note [2] (note: engineering designator is 8mpa0811) units: millimeters (inches) bond pad dimensions are shown to center of bond pad. thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), backside is ground, bond pad/backside metallization: gold all dc bond pads (except vd3) are 0.100 x 0.100 (0.004 x 0.004). all rf bond pads (and vd3) are 0.100 x 0.200 (0.004 x 0.008) bond pad centers are approximately 0.109 (0.004) from the edge of the chip. dicing tolerance: +/- 0.005 (+/- 0.0002). approximate weight: 0.75 mg. bond pad #1 (rf in) bond pad #2 (vg1) bond pad #3 (vd) bond pad #4 (rf out) bond pad #5 (vg2) 4.0-11.0 ghz gaas mmic buffer amplifier b1007-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. october 2009 - rev 10-oct-09
page 8 of 9 app note [1] biasing - the device provides variable gain with adjustable bias regulation. for optimum linearity performance, it is recommended to bias this device at vd=4v with id=90 ma (vg2 at approximately -0.5v and vg1 left open). it is also recommended to use active biasing to control the drain currents because this gives the most reproducible results over temperature or rf level variations. depending on the s upply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifi er, with a low value resistor in series with the drain supply used to sense the current. the gate of the phemt is controlled to maintain correct dra in current and thus drain voltage. the typical gate voltage needed to do this is -0.5v. typically the gate is protected with silicon diodes to limi t the applied voltage. also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply. app note [2] bias arrange m ent - for individual stage bias (recommended for saturated applications) -- each dc pad (vd and vg1,2) needs to have dc bypass capacitance (~100-200 pf) as close to the device as possible. additional dc bypass capacitance (~0.01 uf) is als o recommended. mttf graphs these numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricati ng foundry. 4.0-11.0 ghz gaas mmic buffer amplifier b1007-bd mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. october 2009 - rev 10-oct-09 xb1007-bd: mttf hours vs. backside temperature 1.0e+04 1.0e+05 1.0e+06 1.0e+07 1.0e+08 1.0e+09 1.0e+10 1.0e+11 1.0e+12 1.0e+13 1.0e+14 1.0e+15 1.0e+16 20 30 40 50 60 70 80 90 100 110 120 backside temp (oc) mttf (hours) vdd = 4 v, idd = 100 ma vdd = 4 v, idd = 130 ma xb1007-bd: tch (max) vs. backside temperature 40 60 80 100 120 140 160 180 200 220 20 30 40 50 60 70 80 90 100 110 120 backside temp (oc) tch_max (oc) vdd = 4 v, idd = 100 ma vdd = 4 v, idd = 130 ma
page 9 of 9 handling and assembly information caution! - mimix broadband mmic products contain gallium arsenide (gaas) which can be hazardous to the human body and the environment. for safety, observe the following procedures: ? do not ingest. ? do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. ? observe government laws and company regulations when discarding this product. this product must be discarded in accordance with methods specified by applicable hazardous waste procedures. life support policy - mimix broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the president and general counsel of mimix broadband. as used herein: (1) life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) a critical component is any compone nt of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. esd - gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. die attachment - gaas products from mimix broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. microstrip substrates should be brought as close to the die as possible. the mounting surface should be clean and flat. if using conductive epoxy, recommended epoxies are tanaka ts3332ld, die mat dm6030hk or dm6030hk-pt cured in a nitrogen atmosphere per manufacturer's cure schedule. apply epoxy sparingly to avoid getting any on to the top surface of the die. an epoxy fillet should be visible around the total die periphery. for additional information please see the mimix "epoxy specifications for bare die" application note. if eutectic mounting is preferred, then a fluxless gold-tin (ausn) preform, approximately 0.001 thick, placed between the die and the attachment surface should be used. a die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. the gold-tin eutectic (80% au 20% sn) has a melting point of approximately 280 oc (note: gold germanium should be avoided). the work station temperature should be 310 oc +/- 10 oc. exposure to these extreme temperatures should be kept to minimum. the collet should be heated, and the die pre-heated to avoid excessive thermal shock. avoidance of air bridges and force impact are critical during placement. wire bonding - windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. the recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize rf port bond inductance. gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for dc bias connections. aluminum wire should be avoided. thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. bond force, time and ultrasonics are all critical parameters. bonds should be made from the bond pads on the die to the package or substrate. all bonds should be as short as possible. part number for ordering description xb1007-bd-000v where ?v? is rohs compliant die packed in vacuum release gel paks xb1007-bd-ev1 xb1007 die evaluation module 4.0-11.0 ghz gaas mmic buffer amplifier b1007-bd ordering information caution: esd sensitive appropriate precautions in handling, packaging and testing devices must be observed. proper esd procedures should be followed when handling this device. mimix broadband, inc., 10795 rockley rd., houston, texas 77099 tel: 281.988.4600 fax: 281.988.4615 mimixbroadband.com characteristic data and specifications are subject to change without notice. ? 2009 mimix broadband, inc. export of this item may require appropriate export licensing from the u.s. government. in purchasing these parts, u.s. domestic customers accept their obligation to be compliant with u.s. export laws. october 2009 - rev 10-oct-09
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